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APTM50AM70FT1G Phase leg MOSFET Power Module 5 Q1 7 8 Q2 9 10 1 2 12 3 4 NTC 6 11 VDSS = 500V RDSon = 65m typ @ Tj = 25C ID = 50A @ Tc = 25C Application * * * * Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features * Power MOS 8TM FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration * * * Benefits * * * * Pins 1/2 ; 3/4 ; 5/6 must be shorted together * * Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Tc = 25C Tc = 80C Max ratings 500 50 37 270 30 80 390 42 Unit V A V m W A February, 2010 1-5 APTM50AM170FT1G - Rev 0 Tc = 25C These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTM50AM70FT1G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions Tj = 25C VDS = 500V VGS = 0V Tj = 125C VGS = 10V, ID = 42A VGS = VDS, ID = 2.5mA VGS = 30 V Min Typ Max 250 1000 80 5 100 Unit A m V nA 3 65 4 Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 42A Resistive switching @ 25C VGS = 15V VBus = 333V ID = 42A RG = 2.2 Min Typ 10800 1455 148 340 75 155 60 70 155 50 ns nC Max Unit pF Source - Drain diode ratings and characteristics Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery trr Qrr Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25C Tc = 80C VGS = 0V, IS = - 42A Tj = 25C Tj = 125C Tj = 25C Tj = 125C 1.5 3.93 Min Typ Max 50 37 1 30 260 480 Unit A V V/ns ns C IS = - 42A VR = 100V diS/dt = 100A/s dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 42A di/dt 1000A/s VDD 333V Tj 125C February, 2010 www.microsemi.com 2-5 APTM50AM170FT1G - Rev 0 APTM50AM70FT1G Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Min 4000 -40 -40 -40 2.5 Typ Max 0.32 150 125 100 4.7 80 Unit C/W V C N.m g Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 R25/R25 B25/85 B/B Characteristic Resistance @ 25C T25 = 298.15 K TC=100C RT = R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25 Min Typ 50 5 3952 4 Max Unit k % K % SP1 Package outline (dimensions in mm) See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTM50AM170FT1G - Rev 0 February, 2010 APTM50AM70FT1G Typical Performance Curve 250 ID, Drain Current (A) 200 150 100 TJ=125C Low Voltage Output Characteristics VGS=10V Low Voltage Output Characteristics 140 ID, Drain Current (A) 120 100 80 60 40 20 5.5V TJ=125C 6V VGS=7 &10V 6.5V TJ=25C 50 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 0 0 5 10 15 20 25 30 VDS, Drain to Source Voltage (V) Transfert Characteristics 125 ID, Drain Current (A) 100 75 50 25 TJ=25C VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle TJ=125C RDSon, Drain to Source ON resistance Normalized RDSon vs. Temperature 2.5 VGS=10V ID=42A 2 1.5 1 0.5 25 50 75 100 125 150 0 0 1 2 3 4 5 6 7 TJ, Junction Temperature (C) Gate Charge vs Gate to Source 12 VGS, Gate to Source Voltage 10 8 6 4 2 VDS=400V ID=42A TJ=25C VDS=100V VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) Ciss VDS=250V 10000 1000 Coss 100 Crss 0 60 120 180 240 300 360 0 50 100 150 200 Gate Charge (nC) VDS, Drain to Source Voltage (V) www.microsemi.com 4-5 APTM50AM170FT1G - Rev 0 February, 2010 0 10 APTM50AM70FT1G Drain Current vs Source to Drain Voltage 125 ISD, Reverse Drain Current (A) 100 TJ=125C 75 50 TJ=25C 25 0 0 0.2 0.4 0.6 0.8 1 1.2 VSD, Source to Drain Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.3 0.1 0.05 Single Pulse 0.9 0.7 0.5 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTM50AM170FT1G - Rev 0 February, 2010 |
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